2
RF Device Data
Freescale Semiconductor
MRF8S21200HR6 MRF8S21200HSR6
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
=65Vdc,VGS
=0Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
=28Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 300
μAdc)
VGS(th)
1.2
2.0
2.7
Vdc
Gate Quiescent Voltage
(VDD
=28Vdc,ID
= 1400 mA, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=3Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1400 mA, Pout
= 48 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Power Gain
Gps
16.5
18.1
19.5
dB
Drain Efficiency
ηD
30.0
32.6
?
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.3
?
dB
Adjacent Channel Power Ratio
ACPR
?
--37.1
--35.0
dBc
Input Return Loss
IRL
?
-- 1 5
-- 7
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) VDD
=28Vdc,IDQ
= 1400 mA, Pout
=48WAvg.,
Single--Carrier W--CDMA, IQ Magnitude
Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
±5MHzOffset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
17.8
32.6
6.4
--37.7
-- 1 5
2140 MHz
18.1
32.6
6.3
--37.1
-- 1 5
2170 MHz
18.1
32.9
6.2
--36.2
-- 1 3
1. Part internally matched both on input and output.
(continued)
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